BUK436-200B - INCHANGE

BUK436-200B N-Channel MOSFET

·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE.

Features

or INCHANGE Semiconductor BUK436-200A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 200 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.0 RDS(on) Drain-Source On-stage Resistance VGS=10V; BUK436-200A BUK436-200B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 4.0 V 0.16 Ω 0.2 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 20 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in.