·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE.
or
INCHANGE Semiconductor
BUK436-200A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
200
V
VGS(th) Gate Threshold Voltage
VDS=VGS; ID=1mA
2.0
RDS(on) Drain-Source On-stage Resistance VGS=10V;
BUK436-200A BUK436-200B
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
4.0
V
0.16
Ω
0.2
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS= 0
20
uA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUK436-200B |
INCHANGE |
N-Channel MOSFET | |
2 | BUK436-100A |
Philips |
PowerMOS transistor | |
3 | BUK436-100A |
INCHANGE |
N-Channel MOSFET | |
4 | BUK436-100B |
Philips |
PowerMOS transistor | |
5 | BUK436-100B |
INCHANGE |
N-Channel MOSFET | |
6 | BUK436-60A |
INCHANGE |
N-Channel MOSFET | |
7 | BUK436-60B |
INCHANGE |
N-Channel MOSFET | |
8 | BUK436-800A |
INCHANGE |
N-Channel MOSFET | |
9 | BUK436-800B |
INCHANGE |
N-Channel MOSFET | |
10 | BUK436W-1000B |
NXP |
PowerMOS transistor | |
11 | BUK436W-200A |
NXP |
PowerMOS transistor | |
12 | BUK436W-200B |
NXP |
PowerMOS transistor |