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BUK436-200A |
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| Part Number | BUK436-200A |
| Manufacturer | INCHANGE |
| Description | ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode... |
| Features |
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INCHANGE Semiconductor
BUK436-200A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 200 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.0 RDS(on) Drain-Source On-stage Resistance VGS=10V; BUK436-200A BUK436-200B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 4.0 V 0.16 Ω 0.2 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 20 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in... |
| Document |
 BUK436-200A Data Sheet
PDF 231.09KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUK436-200B |
INCHANGE |
N-Channel MOSFET |
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| 2 | BUK436-100A |
Philips |
PowerMOS transistor |
|
| 3 | BUK436-100A |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUK436-100B |
Philips |
PowerMOS transistor |
|
| 5 | BUK436-100B |
INCHANGE |
N-Channel MOSFET |
|