BU118 - Inchange Semiconductor

BU118 Silicon NPN Power Transistor

·Excellent Safe Operating Area VCE:200V ICM:7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V THERMAL CHARACTERISTICS VCEO Collector-Emit.

Features

VCBO Collector-Base Sustaining Voltage IC=1mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V ICEO Collector Cutoff Current VCE= 200V; IB=0 IEBO Emitter Cutoff Current VEB= 6.0V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 5V BU118 MIN MAX UNIT 200 V 400 V 1.0 V 1.3 V 1.5 V 1.0 mA 0.1 mA 20 150 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe.