BU100 - Inchange Semiconductor

BU100 Silicon NPN Power Transistors

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 3.3V(Max.)@ IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltage,fast switching and industrial applications. ABSOLUT.

Features

O(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2.5A ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V BU100 MIN TYP. MAX UNIT 60 V 150 V 7 V 3.3 V 2.2 V 10 μA 10 μA 40 90 0.1 MHz NOTICE： ISC re.