·Collector-Emitter Voltage- :VCEX(SUS) = 550V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for deflection circuits applications in color TV receivers fitted with 90℃ kinescope. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emit.
MBOL PARAMETER CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 550V; VBE= -5V hFE DC Current Gain IC= 6A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz tf Fall Time IC=6A; IB1= 1A; VBE= -3V BU112 MIN TYP. MAX UNIT 10 V 3.0 V 10 mA 7 6 MHz 250 pF 1.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BU110 |
INCHANGE |
NPN Transistor | |
2 | BU111 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | BU113 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | BU114 |
INCHANGE |
NPN Transistor | |
5 | BU118 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | BU11UA3WNVX-TL |
Rohm |
FULL CMOS LDO Regulator | |
7 | BU11UC3WG-TL |
Rohm |
FULL CMOS LDO Regulator | |
8 | BU11UC3WG-TR |
Rohm |
FULL CMOS LDO Regulator | |
9 | BU100 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
10 | BU1006 |
Vishay Siliconix |
Enhanced PowerBridge Rectifiers | |
11 | BU1006-E3 |
Vishay |
Bridge Rectifiers | |
12 | BU1006-M3 |
Vishay |
Bridge Rectifiers |