BU113 - Inchange Semiconductor

BU113 Silicon NPN Power Transistor

·Collector-Emitter Voltage- :VCEX(SUS) = 700V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output state of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 700 .

Features

CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 250V; VBE= -5V VCE= 700V; VBE= -5V hFE DC Current Gain IC= 8A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz tf Fall Time IC= 8A; IB1= -IB2= 1.6A BU113 MIN TYP. MAX UNIT 10 V 3.0 V 2.0 10 mA 7 6 MHz 250 pF 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.