BST86 - NXP

BST86 N-channel transistor

N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown PINNING - SOT89 1 2 3 = source = drain = g.

Features

• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No second breakdown PINNING - SOT89 1 2 3 = source = drain = gate QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 15 mA; VGS = 3 V Transfer admittance ID = 300 mA; VDS = 15 V  Yfs typ. RDS(on) typ. max. VDS VDS(SM) ±VGSO ID Ptot max. max. max. max. max. BST86 180 V 200 V 20 V 300 mA 1 W 7 Ω 10 Ω 250 mS PIN CONFIGURATION handbook, halfpage d g 1 Botto.