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SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – BST39 BT2 7 BST16 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Diss.
* High VCEO
* Low saturation voltage COMPLEMENTARY TYPE
– PARTMARKING DETAIL
– BST39 BT2 7
BST16
C
E C B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -350 -300 -4 -1 -500 1 -65 to +150 UNIT V V V A mA W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage .
BST16 - NXP
PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BST39 and BST40. MARKING TYPE NUMBER BST15 BST1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BST100 |
NXP |
P-channel transistor |
|
| 2 | BST120 |
NXP |
P-channel transistor |
|
| 3 | BST122 |
NXP |
P-channel transistor |
|
| 4 | BST15 |
NXP |
PNP transistors |
|
| 5 | BST15 |
Zetex Semiconductors |
SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
|
| 6 | BST39 |
NXP |
NPN transistors |
|
| 7 | BST39 |
HOTTECH |
GENERAL PURPOSE TRANSISTOR |
|
| 8 | BST39 |
GME |
NPN High-Voltage Transistor |
|
| 9 | BST39 |
Kexin |
(BST39 / BST40) NPN High-Voltage Transistors |
|
| 10 | BST39 |
Jin Yu Semiconductor |
(BST39 / BST40) TRANSISTOR |
|
| 11 | BST39 |
Diodes |
350V NPN HIGH-VOLTAGE TRANSISTOR |
|
| 12 | BST40 |
NXP |
NPN transistors |
|