N-channel vertical D-MOS transistor in SOT89 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown PINNING - SOT89 1 = source 2 = gate 3 = drain Transfer admittance ID = 250 .
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No second breakdown PINNING - SOT89 1 = source 2 = gate 3 = drain Transfer admittance ID = 250 mA; VDS = 15 V Yfs typ. QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 250 mA; VGS = 10 V RDS(on) typ. max. VDS ±VGSO ID Ptot max. max. max. max.
BST84
200 V 20 V 250 mA 1 W 6 Ω 12 Ω
250 mS
PIN CONFIGURATION
handbook, halfpage
handbook, 2 columns
d
g
MBB076 - 1
s
1
Bottom view
3
2
MSB013
Marking: KN
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BST80 |
NXP |
N-channel transistor | |
2 | BST82 |
NXP |
N-channel transistor | |
3 | BST82 |
Zetex Semiconductors |
SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
4 | BST86 |
NXP |
N-channel transistor | |
5 | BST100 |
NXP |
P-channel transistor | |
6 | BST120 |
NXP |
P-channel transistor | |
7 | BST122 |
NXP |
P-channel transistor | |
8 | BST15 |
NXP |
PNP transistors | |
9 | BST15 |
Zetex Semiconductors |
SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
10 | BST16 |
Zetex Semiconductors |
PNP TRANSISTOR | |
11 | BST16 |
NXP |
PNP transistors | |
12 | BST39 |
NXP |
NPN transistors |