BST100 - NXP

BST100 P-channel transistor

P-channel vertical D-MOS transistor TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb.

Features

• Very low RDS(on)
• Direct interface to C-MOS
• High-speed switching
• No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Transfer admittance −ID = 200 mA; −VDS = 15 V PINNING - TO-92 VARIANT 1 2 3 = source = gate = drain  Yfs typ. RDS(on) −VDS ±VGSO −ID Ptot BST100 max. max. max. max. typ. max. 60 V 20 V 0.3 A 1 W 4,5 Ω 6 Ω 200 mS PIN CONFIGURATION handbook, halfpage d 1 2 3 g MAM144 s Note: various pinout configurations .