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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSP62T1/D PNP Small-Signal Darlington Transistor This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applica.
tor Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 1.5 12
– 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C
DEVICE MARKING
BS3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec
1. Device mounted on a FR
–4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSP62 |
NXP |
PNP Darlington transistors |
|
| 2 | BSP62 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
|
| 3 | BSP62 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
| 4 | BSP60 |
NXP |
PNP Darlington transistors |
|
| 5 | BSP60 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
| 6 | BSP60 |
nexperia |
PNP Darlington transistor |
|
| 7 | BSP603S2L |
Infineon Technologies AG |
OptiMOS Power-Transistor |
|
| 8 | BSP61 |
NXP |
PNP Darlington transistors |
|
| 9 | BSP61 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
|
| 10 | BSP61 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
| 11 | BSP612P |
Infineon |
Small-Signal-Transistor |
|
| 12 | BSP613P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|