BSP612P OptiMOS™-P Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V -60 120 170 -3 • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant PG-SOT-223 • Halogen-free according to AEC61249-2-21 V mW A Type BSS612P Package SOT2.
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
Product Summary
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
-60 120 170 -3
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
PG-SOT-223
• Halogen-free according to AEC61249-2-21
V mW
A
Type BSS612P
Package SOT223
Tape and Reel Information H6327: 1000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Marking Halogen Free BSP612P Yes
Packing Non dry
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T A=25 °C
T A=70 °C
Pulsed drain current Avalanche ener.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSP61 |
NXP |
PNP Darlington transistors | |
2 | BSP61 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) | |
3 | BSP61 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors | |
4 | BSP613P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
5 | BSP615S2L |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
6 | BSP60 |
NXP |
PNP Darlington transistors | |
7 | BSP60 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors | |
8 | BSP60 |
nexperia |
PNP Darlington transistor | |
9 | BSP603S2L |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
10 | BSP62 |
NXP |
PNP Darlington transistors | |
11 | BSP62 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) | |
12 | BSP62 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |