BSP62 - Siemens Semiconductor Group

BSP62 PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

PNP Silicon Darlington Transistors BSP 60 … BSP 62 High collector current q Low collector-emitter saturation voltage q Complementary types: BSP 50 … BSP 52 (NPN) q Type BSP 60 BSP 61 BSP 62 Marking BSP 60 BSP 61 BSP 62 Ordering Code (tape and reel) Q62702-P1166 Q62702-P1167 Q62702-P1168 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Rati.

Features

Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage1) IC = 10 mA, RBE = 150 Ω BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 µA, IB = 0 BSP 60 BSP 61 BSP 62 Emitter-base breakdown voltage IE = 100 µA, IB = 0 Collector-emitter cutoff current VCE = VCERmax, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA Base-emitter saturation voltage2) IC = .