BSM200GB120 - Siemens Semiconductor Group

BSM200GB120 IGBT

BSM 200 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C6707.

Features

97 BSM 200 GB 120 DL Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.2 2.5 6.5 2.6 3 V VGE = VCE, IC = 8 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 200 A, Tj = 25 °C VGE = 15 V, IC = 200 A, Tj = 125 °C Zero gate voltage collector current ICES 10 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 110 .