Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector curre.
Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC= 200A, VGE= 15V, Tvj= 25°C IC= 200A, VGE= 15V, Tvj= 125°C IC= 4,0mA, VCE= VGE, Tvj= 25°C VCE sat min. VGE(th) 4,5 typ. 1,95 2,20 5,5 max. 2,45 6,5 V V V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 9 - nF f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25°C VCE= 600V,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM200GB120 |
Siemens Semiconductor Group |
IGBT | |
2 | BSM200GB120DL |
Siemens Semiconductor Group |
IGBT | |
3 | BSM200GB120DLC |
eupec |
IGBT | |
4 | BSM200GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM200GB170DLC |
eupec |
IGBT | |
6 | BSM200GA100D |
Infineon Technologies |
IGBT Module | |
7 | BSM200GA120D |
Infineon Technologies |
IGBT Module | |
8 | BSM200GA120DL |
Eupec GmbH |
IGBT Power Module | |
9 | BSM200GA120DLC |
Eupec GmbH |
IGBT Power Module | |
10 | BSM200GA120DLCS |
Eupec GmbH |
IGBT Power Module | |
11 | BSM200GA120DN2 |
Eupec GmbH |
IGBT Power Module | |
12 | BSM200GA160D |
Infineon Technologies |
IGBT Module |