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BSM200GB120 |
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| Part Number | BSM200GB120 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 200 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 D... |
| Features |
97
BSM 200 GB 120 DL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.2 2.5 6.5 2.6 3
V
VGE = VCE, IC = 8 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 200 A, Tj = 25 °C VGE = 15 V, IC = 200 A, Tj = 125 °C
Zero gate voltage collector current
ICES
10 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
110 ... |
| Document |
 BSM200GB120 Data Sheet
PDF 128.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSM200GB120DL |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BSM200GB120DLC |
eupec |
IGBT |
|
| 3 | BSM200GB120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 4 | BSM200GB170DLC |
eupec |
IGBT |
|
| 5 | BSM200GB60DLC |
Eupec |
IGBT Power Module |
|