OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC014NE2LSI .
• Optimized for high performance Buck converter
• Monolithic integrated Schottky like diode
• Very low on-resistance R DS(on) @ V GS=4.5 V
• 100% avalanche tested
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC014NE2LSI
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
25 V 1.4 mW 100 A 25 nC 39 nC
PG-TDSON-8
Type BSC014NE2LSI
Package PG-TDSON-8
Marking 014NE2LI
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC014N03LS |
Infineon |
Power MOSFET | |
2 | BSC014N03LSG |
Infineon |
Power MOSFET | |
3 | BSC014N03MSG |
Infineon |
Power MOSFET | |
4 | BSC014N04LS |
Infineon |
MOSFET | |
5 | BSC014N04LSI |
Infineon |
MOSFET | |
6 | BSC014N06NS |
Infineon Technologies |
Power-Transistor | |
7 | BSC014N06NST |
Infineon |
MOSFET | |
8 | BSC010N04LS |
Infineon |
Power MOSFET | |
9 | BSC010N04LSI |
Infineon |
MOSFET | |
10 | BSC010NE2LS |
Infineon |
MOSFET | |
11 | BSC010NE2LSI |
Infineon |
MOSFET | |
12 | BSC011N03LS |
Infineon |
Power MOSFET |