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. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• Optimized for sychronous rectification
• 175°C rated
• Very low on‑resistance RDS(on)
• 100% avalanche tested
• Superior thermal resistance
• N‑channel, logic level
• Pb‑free lead plating; RoHS compliant
• Halogen‑free according to IEC61249‑2‑21
• Higher solder joint reliability due to enlarged source interconnection
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss Qg (0V..10V)
Key Performance Parameters
Value
Unit
40
V
1.0
mΩ
292
A
84
nC
95
nC
PG‑TDSON‑8
8 7
6
5
5 6
7
8
Pin 1
2 3 4
4 3 2 1
Drain P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSC010N04LSI |
Infineon |
MOSFET |
|
| 2 | BSC010NE2LS |
Infineon |
MOSFET |
|
| 3 | BSC010NE2LSI |
Infineon |
MOSFET |
|
| 4 | BSC011N03LS |
Infineon |
Power MOSFET |
|
| 5 | BSC011N03LSI |
Infineon |
Power MOSFET |
|
| 6 | BSC014N03LS |
Infineon |
Power MOSFET |
|
| 7 | BSC014N03LSG |
Infineon |
Power MOSFET |
|
| 8 | BSC014N03MSG |
Infineon |
Power MOSFET |
|
| 9 | BSC014N04LS |
Infineon |
MOSFET |
|
| 10 | BSC014N04LSI |
Infineon |
MOSFET |
|
| 11 | BSC014N06NS |
Infineon Technologies |
Power-Transistor |
|
| 12 | BSC014N06NST |
Infineon |
MOSFET |
|