BSC014N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications Product Summary V .
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
Product Summary
V DS R DS(on),max
ID
V GS=10 V V GS=4.5 V
30 V 1.4 mΩ 1.75 100 A
PG-TDSON-8
• Superior thermal resistance
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC014N03MS G
PG-TDSON-8 014N03MS
Maximum ratings, at T j=25 °C, unless otherwise .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC014N03LS |
Infineon |
Power MOSFET | |
2 | BSC014N03LSG |
Infineon |
Power MOSFET | |
3 | BSC014N04LS |
Infineon |
MOSFET | |
4 | BSC014N04LSI |
Infineon |
MOSFET | |
5 | BSC014N06NS |
Infineon Technologies |
Power-Transistor | |
6 | BSC014N06NST |
Infineon |
MOSFET | |
7 | BSC014NE2LSI |
Infineon |
Power MOSFET | |
8 | BSC010N04LS |
Infineon |
Power MOSFET | |
9 | BSC010N04LSI |
Infineon |
MOSFET | |
10 | BSC010NE2LS |
Infineon |
MOSFET | |
11 | BSC010NE2LSI |
Infineon |
MOSFET | |
12 | BSC011N03LS |
Infineon |
Power MOSFET |