. . . . . . .
•Optimizedforsynchronousrectification
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
1.45
mΩ
ID 100 A
QOSS
53
nC
QG(0V..10V)
55
nC
TDSON-8FL(enlargedsourceinterconnection)
8 7 65
1 2 34
4 3 2 1
5 67 8.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC014N04LS |
Infineon |
MOSFET | |
2 | BSC014N03LS |
Infineon |
Power MOSFET | |
3 | BSC014N03LSG |
Infineon |
Power MOSFET | |
4 | BSC014N03MSG |
Infineon |
Power MOSFET | |
5 | BSC014N06NS |
Infineon Technologies |
Power-Transistor | |
6 | BSC014N06NST |
Infineon |
MOSFET | |
7 | BSC014NE2LSI |
Infineon |
Power MOSFET | |
8 | BSC010N04LS |
Infineon |
Power MOSFET | |
9 | BSC010N04LSI |
Infineon |
MOSFET | |
10 | BSC010NE2LS |
Infineon |
MOSFET | |
11 | BSC010NE2LSI |
Infineon |
MOSFET | |
12 | BSC011N03LS |
Infineon |
Power MOSFET |