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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•OptimizedforhighperformanceSMPS
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
1.1
mΩ
ID
230
A
QOSS
45
nC
QG(0V..10V)
68
nC
PG-TDSON-8
8 7 6 5
5 6 7 8
Pin 1
2 3
4
4 3
2 1
Drain Pin 5-8
Gate
*1
Pin 4
Source
*1: Internal body diode Pin 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSC011N03LS |
Infineon |
Power MOSFET |
|
| 2 | BSC010N04LS |
Infineon |
Power MOSFET |
|
| 3 | BSC010N04LSI |
Infineon |
MOSFET |
|
| 4 | BSC010NE2LS |
Infineon |
MOSFET |
|
| 5 | BSC010NE2LSI |
Infineon |
MOSFET |
|
| 6 | BSC014N03LS |
Infineon |
Power MOSFET |
|
| 7 | BSC014N03LSG |
Infineon |
Power MOSFET |
|
| 8 | BSC014N03MSG |
Infineon |
Power MOSFET |
|
| 9 | BSC014N04LS |
Infineon |
MOSFET |
|
| 10 | BSC014N04LSI |
Infineon |
MOSFET |
|
| 11 | BSC014N06NS |
Infineon Technologies |
Power-Transistor |
|
| 12 | BSC014N06NST |
Infineon |
MOSFET |
|