BLF246 - NXP

BLF246 VHF power MOS transistor

drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Hand.

Features

• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch. APPLICATIONS
• Large signal amplifier applications in the VHF frequency range. handbook, halfpage BLF246 PINNING - SOT121 PIN 1 2 3 4 SYMBOL d s g s DESCRIPTION drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Ref.