30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class.
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz
BLF2425M9L30; BLF2425M9LS30
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
Simplified outline
BLF2425M9L30 (SOT1135A)
1 drain
2 gate
1
3 source
[1]
BLF2425M9LS30 (SOT1135B)
1 drain
2 gate
3 so.
30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF2425M9LS140 |
Ampleon |
Power LDMOS transistor | |
2 | BLF2425M9LS30 |
Ampleon |
Power LDMOS transistor | |
3 | BLF2425M9LS30 |
NXP |
Power LDMOS transistor | |
4 | BLF2425M6L180P |
Ampleon |
Power LDMOS transistor | |
5 | BLF2425M6L180P |
NXP |
Power LDMOS transistor | |
6 | BLF2425M6LS180P |
Ampleon |
Power LDMOS transistor | |
7 | BLF2425M6LS180P |
NXP |
Power LDMOS transistor | |
8 | BLF2425M7L100 |
Ampleon |
Power LDMOS transistor | |
9 | BLF2425M7L100 |
NXP |
Power LDMOS transistor | |
10 | BLF2425M7L140 |
Ampleon |
Power LDMOS transistor | |
11 | BLF2425M7L140 |
NXP |
Power LDMOS transistor | |
12 | BLF2425M7L250P |
Ampleon |
Power LDMOS transistor |