140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9LS140 is designed for high power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance Typical RF performance at Tcase = 25 C, IDq = 60 mA in a common source class-AB p.
High efficiency
High power gain
Excellent ruggedness
Excellent reliability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF2425M9LS30 |
Ampleon |
Power LDMOS transistor | |
2 | BLF2425M9LS30 |
NXP |
Power LDMOS transistor | |
3 | BLF2425M9L30 |
Ampleon |
Power LDMOS transistor | |
4 | BLF2425M9L30 |
NXP |
Power LDMOS transistor | |
5 | BLF2425M6L180P |
Ampleon |
Power LDMOS transistor | |
6 | BLF2425M6L180P |
NXP |
Power LDMOS transistor | |
7 | BLF2425M6LS180P |
Ampleon |
Power LDMOS transistor | |
8 | BLF2425M6LS180P |
NXP |
Power LDMOS transistor | |
9 | BLF2425M7L100 |
Ampleon |
Power LDMOS transistor | |
10 | BLF2425M7L100 |
NXP |
Power LDMOS transistor | |
11 | BLF2425M7L140 |
Ampleon |
Power LDMOS transistor | |
12 | BLF2425M7L140 |
NXP |
Power LDMOS transistor |