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100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 18 27 .
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Design.
BLF2425M7LS100 - NXP
100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical per.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF2425M7LS140 |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF2425M7LS140 |
NXP |
Power LDMOS transistor |
|
| 3 | BLF2425M7LS250P |
Ampleon |
Power LDMOS transistor |
|
| 4 | BLF2425M7LS250P |
NXP |
Power LDMOS transistor |
|
| 5 | BLF2425M7L100 |
Ampleon |
Power LDMOS transistor |
|
| 6 | BLF2425M7L100 |
NXP |
Power LDMOS transistor |
|
| 7 | BLF2425M7L140 |
Ampleon |
Power LDMOS transistor |
|
| 8 | BLF2425M7L140 |
NXP |
Power LDMOS transistor |
|
| 9 | BLF2425M7L250P |
Ampleon |
Power LDMOS transistor |
|
| 10 | BLF2425M7L250P |
NXP |
Power LDMOS transistor |
|
| 11 | BLF2425M6L180P |
Ampleon |
Power LDMOS transistor |
|
| 12 | BLF2425M6L180P |
NXP |
Power LDMOS transistor |
|