BLA6H1011-600 - Ampleon

BLA6H1011-600 LDMOS avionics power transistor

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (MHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 to 1090 48 .

Features

 Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 s with  of 2 %:  Output power = 600 W  Power gain = 17 dB  Efficiency = 52 %
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse .