BLA6G1011LS-200RG - Ampleon

BLA6G1011LS-200RG Power LDMOS transistor

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C. Test signal f (MHz) VDS PL Gp D tr (V) (W) (dB) (%) (ns) Typical RF performance in a class-AB production test circuit for SOT502A pulsed RF 1030 to 1090 28 200 20 65 10 Typical RF p.

Features

 Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:  Output power = 200 W  Power gain = 20 dB  Efficiency = 65 %
 Easy power control
 Integrated ESD protection
 Enhanced ruggedness
 High efficiency
 Excellent thermal stability
 Designed for b.