BGA427 - Siemens Semiconductor Group

BGA427 Si-MMIC-Amplifier

BGA 427 Si-MMIC-Amplifier in SIEGET® 25-Technologie Preliminary data • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S21 |2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA) • Noise figure NF = 2.2 dB at 1.8 GHz • typical device voltage VD = 2 V to 5 V • Reverse isolation < 35 d.

Features

d on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BGA 427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50W, Testfixture Appl..1 Insertion power gain |S21| 2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz S12 typ. max. dB 27 22 28.5 22 - Unit NF 1.9 2 2.2 +7 >12 >.