and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements com.
• GMA = 23dB at 900MHz
• Ultra high reverse isolation, 62 dB at 900MHz
• Low noise figure, F50Ω = 1.3dB at 900MHz
• On chip bias circuitry, 5.5 mA bias current at VCC = 3V
• Typical supply voltage: 2.5 to 5.0V
• SIEGET®-25 technology Applications
• Buffer amplifiers
• LNAs
• Oscillator active devices
GND, 1
3 4 2 1
VPS05178
Description BGA416 is a monolithic silicon cascode amplifier with high reverse isolation. A bias network is integrated for simplified biasing.
Bias
RFout, 4
RFin, 2
GND, 3
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA416
Data sh.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BGA420 |
Siemens Semiconductor Group |
Si-MMIC-Amplifierin | |
2 | BGA420 |
Infineon Technologies AG |
Si-MMIC-Amplifier | |
3 | BGA425 |
Siemens Semiconductor Group |
Si-MMIC-Amplifier | |
4 | BGA427 |
Siemens Semiconductor Group |
Si-MMIC-Amplifier | |
5 | BGA427 |
Infineon Technologies AG |
Si-MMIC-Amplifier | |
6 | BGA428 |
Infineon Technologies AG |
Gain and PCS Low Noise Amplifier | |
7 | BGA430 |
Infineon Technologies AG |
Broad Band High Gain LNA | |
8 | BGA123L4 |
Infineon |
Small Footprint Ultra Low Current Low Noise Amplifier | |
9 | BGA2001 |
NXP |
Silicon MMIC amplifier | |
10 | BGA2003 |
NXP |
Silicon MMIC amplifier | |
11 | BGA2012 |
NXP |
1900 MHz high linear low noise amplifier | |
12 | BGA2022 |
NXP |
MMIC mixer |