BGA2012 - NXP

BGA2012 1900 MHz high linear low noise amplifier

Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. handbook, halfpage BGA2012 PINNING PIN 1 2 3 4 5, 6 RF in VC VS RF out GND DESCRIPTION VS 5 4 6 RF out VC 1 2 3 MBL251 BIAS CIRCUIT Top view Marki.

Features

• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current. APPLICATIONS
• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc. DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. handbook, halfpage BGA2012 PINNING PIN 1 2 3 4 5, 6 RF in VC VS RF out GND DESCRIPTION VS 5 4 6 RF out VC 1 2 3 MBL251 BIAS CIRCUIT T.