BGA420 - Siemens Semiconductor Group

BGA420 Si-MMIC-Amplifierin

BGA 420 Si-MMIC-Amplifier in SIEGET® 25-Technologie Preliminary data • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S21 |2 = 13 dB at 1.8 GHz 3 4 IP3out = +9 dBm at 1.8 GHz (VD = 3 V, ID = typ. 6.4 mA) • Noise figure NF = 2.2 dB at 1.8 GHz • Reverse isolation > 28 dB and return loss IN / OUT > 12 dB at 1.8 GHz 4 3 OUT 2 1 VD VPS05605 Circ.

Features

e pcb Semiconductor Group Semiconductor Group 11 Jul-13-1998 1998-11-01 BGA 420 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Typical biasing configuration Unit max. 8 mA dB typ. 6.7 19 17 13 28 ID |S21| 2 5.4 17 15 11 25 S12 NF 7.5 -2.5 8 .