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BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 280 REs Q62702-F1378 1=C 2=.
ess otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V µA 100 nA 100 µA 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFP 280 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP280T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 2 | BFP280TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 3 | BFP280TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 4 | BFP280W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 5 | BFP22 |
Siemens Semiconductor Group |
NPN Silicon Transistors |
|
| 6 | BFP23 |
Siemens Semiconductor Group |
PNP Silicon Transistors |
|
| 7 | BFP25 |
Siemens Semiconductor Group |
NPN Silicon Transistors |
|
| 8 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|
| 9 | BFP136 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 10 | BFP136 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 11 | BFP136W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 12 | BFP136W |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|