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NPN Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BFP 23, BFP 26 (PNP) q 1 3 2 BFP 22 BFP 25 Type BFP 22 BFP 25 Marking – Ordering Code (tape and reel) Q62702-F621 Q62702-F721 Pin Configuration 1 2 3 E B C Package1) TO-92 Maximum Ratings Paramete.
rwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage BFP 22 IC = 1 mA BFP 25 Collector-base breakdown voltage BFP 22 IC = 100 µA BFP 25 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 160 V VCB = 250 V VCB = 160 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) BFP 22 BFP 25 BFP 22 BFP 25 IEB0 hFE 25 40 50 40 VCEsat
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– VBEsat
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– 0.4 0.5 0.9
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– V V(BR)CE0 200 300 V(BR)CB0 200 300 V(BR)EB0 IC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP23 |
Siemens Semiconductor Group |
PNP Silicon Transistors |
|
| 2 | BFP25 |
Siemens Semiconductor Group |
NPN Silicon Transistors |
|
| 3 | BFP280 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 4 | BFP280T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 5 | BFP280TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 6 | BFP280TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 7 | BFP280W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 8 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|
| 9 | BFP136 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 10 | BFP136 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 11 | BFP136W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 12 | BFP136W |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|