BFP280 |
Part Number | BFP280 |
Manufacturer | Siemens Semiconductor Group |
Description | BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at ... |
Features |
ess otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
8 100 -
V µA 100 nA 100 µA 1 30 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 8 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 3 mA, VCE = 5 V
Semiconductor Group
2
Dec-11-1996
BFP 280
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
f... |
Document |
BFP280 Data Sheet
PDF 60.00KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BFP280T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
2 | BFP280TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
3 | BFP280TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
4 | BFP280W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFP22 |
Siemens Semiconductor Group |
NPN Silicon Transistors |