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These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mo.
z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BF95N50T |
BYD |
N-Channel MOSFET |
|
| 2 | BF959 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
|
| 3 | BF959 |
Motorola Inc |
VHF Transistor |
|
| 4 | BF959 |
ON Semiconductor |
VHF Transistor |
|
| 5 | BF959 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 6 | BF900 |
Inter Control |
Sicherungshalter |
|
| 7 | BF900 |
Siliconix |
n-channel dual gate MOSFET |
|
| 8 | BF901 |
NXP |
Silicon n-channel dual gate MOS-FETs |
|
| 9 | BF901R |
NXP |
Silicon n-channel dual gate MOS-FETs |
|
| 10 | BF9024SPD-M |
BYD |
P-Channel MOSFET and Schottky Diode |
|
| 11 | BF9028DND-A |
BYD |
N-Channel MOSFET |
|
| 12 | BF9028DND-GE |
BYD |
N-Channel MOSFET |
|