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BF95N50L |
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| Part Number | BF95N50L |
| Manufacturer | BYD |
| Description | These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe... |
| Features |
z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
IAR Avalanche Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)... |
| Document |
 BF95N50L Data Sheet
PDF 209.02KB |
| Distributor | Stock | Price | Buy |
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