www.DataSheet4U.com BF959 VHF Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C 1 2 Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BF959 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package 3 TO−92 CASE 29 ST.
• Pb−Free Packages are Available
*
http://onsemi.com
COLLECTOR 1 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C 1 2 Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BF959 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package 3 TO−92 CASE 29 STYLE 21 BF 959 AYWW G G mW mW/°C Value 20 30 3.0 100 Unit Vdc Vdc Vdc mAdc 2 EMITTER 3 BASE
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC.
SYMBOL VALUE Collector Emitter Voltage VCEO 20 Collector Base Voltage VCBO 30 Emitter Base Voltage VEBO 3 Co.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF959/D VHF Transistor NPN Silicon COLLECTOR 1 3 BASE 2 .
NPN Silicon RF Transistor q q q BF 959 For SAW filter driver applications in TV tuners For linear broadband VHF amplif.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF95N50L |
BYD |
N-Channel MOSFET | |
2 | BF95N50T |
BYD |
N-Channel MOSFET | |
3 | BF900 |
Inter Control |
Sicherungshalter | |
4 | BF900 |
Siliconix |
n-channel dual gate MOSFET | |
5 | BF901 |
NXP |
Silicon n-channel dual gate MOS-FETs | |
6 | BF901R |
NXP |
Silicon n-channel dual gate MOS-FETs | |
7 | BF9024SPD-M |
BYD |
P-Channel MOSFET and Schottky Diode | |
8 | BF9028DND-A |
BYD |
N-Channel MOSFET | |
9 | BF9028DND-GE |
BYD |
N-Channel MOSFET | |
10 | BF9028DNT |
BYD |
N-Channel MOSFET | |
11 | BF90315SNS |
BYD |
N-Channel MOSFET | |
12 | BF9035SNZ-M |
BYD |
N-Channel MOSFET |