BF9024SPD-M - BYD

BF9024SPD-M P-Channel MOSFET and Schottky Diode

The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. 8 7 6 5 Features MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ .(VGS = -2.5V) VF=0.42V K D 1 2 3 4 1,2 Anode; 3.

Features

MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ .(VGS = -2.5V) VF=0.42V K D 1 2 3 4 1,2 Anode; 3 Source; 4 Gate 5,6 Drain; 7,8 Kathode K: Kathode;D: Drain Schottky Diode z Absolute Maximum Ratings (Ta = 25℃) Parameter Mosfet Drain to Source Voltage (MOSFET and Schottky) Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Maximun Power Dissipation Channel Temperature Storage Temperature Schottky Diode Reverse Voltage Average Forward Current Pulsed Forward Current Maximun Power Dissipation Storage Temperature a a .