BDT65C SILICON POWER TRANSISTOR Datasheet

BDT65C SILICON POWER TRANSISTOR

·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDT64C APPLICATIONS ·For audio output stages and general purpose amplifier and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage.

Features

cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Forward diode voltage Forward diode voltage Collector capacitance Turn-on time IC=5A ,IBon=-IBoff=20mA toff Turn-off time 6.0 CONDITIONS IC=30mA, IB=0 IC=5A ,IB=20mA IC=10A ,IB=100mA IC=5A ; VCE=4V VCB=120V, IE=0 VCB=60V, IE=0;Tj=150 VCE=60V, IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=5A ; VCE=4V IC=12A ; VCE=4V IF=5A IF=12A IE=0 ; VCB=10V;f=1MHz 2.0 200 1.0 1000 1000 1500 MIN 120 TYP. www.datasheet4u.com BDT65C SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VF-.

The same part from a different manufacturer

BDT65C - Comset Semiconductors

SEMICONDUCTORS BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalringt.

BDT65C - INCHANGE

·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to.

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BDT65C - SavantIC