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SEMICONDUCTORS BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symb.
Value Unit IB Base Current 500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case Value 1 Unit °C/W 26/09/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT65-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit IE= 0 .
BDT65A - INCHANGE
·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT65 |
INCHANGE |
NPN Transistor |
|
| 2 | BDT65 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
|
| 3 | BDT65AF |
INCHANGE |
NPN Transistor |
|
| 4 | BDT65B |
INCHANGE |
NPN Transistor |
|
| 5 | BDT65B |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
|
| 6 | BDT65BF |
INCHANGE |
NPN Transistor |
|
| 7 | BDT65C |
INCHANGE |
NPN Transistor |
|
| 8 | BDT65C |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | BDT65C |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
|
| 10 | BDT65CF |
INCHANGE |
NPN Transistor |
|
| 11 | BDT65F |
INCHANGE |
NPN Transistor |
|
| 12 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|