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BDT65C |
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| Part Number | BDT65C |
| Manufacturer | Comset Semiconductors |
| Description | SEMICONDUCTORS BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages... |
| Features |
Value
Unit
IB
Base Current
500
mA
PT
Power Dissipation
@ Tmb < 25°
125
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
www.DataSheet.net/
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
IE= 0 ... |
| Document |
 BDT65C Data Sheet
PDF 163.31KB |
| Distributor | Stock | Price | Buy |
|---|
