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·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT65F 60.
semi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT65F V(BR)CEO Collector-Emitter Breakdown Voltage BDT65AF IC= 30mA ;IB=0 BDT65BF BDT65CF VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V VECF ICEO ICBO IEBO C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Cu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT65A |
INCHANGE |
NPN Transistor |
|
| 2 | BDT65A |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
|
| 3 | BDT65 |
INCHANGE |
NPN Transistor |
|
| 4 | BDT65 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
|
| 5 | BDT65B |
INCHANGE |
NPN Transistor |
|
| 6 | BDT65B |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
|
| 7 | BDT65BF |
INCHANGE |
NPN Transistor |
|
| 8 | BDT65C |
INCHANGE |
NPN Transistor |
|
| 9 | BDT65C |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | BDT65C |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS |
|
| 11 | BDT65CF |
INCHANGE |
NPN Transistor |
|
| 12 | BDT65F |
INCHANGE |
NPN Transistor |
|