Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63F 60 .
ion to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63F V(BR)CEO Collector-Emitter Breakdown Voltage BDT63AF BDT63BF IC= 30mA ;IB=0 BDT63CF VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V VECF ICEO ICBO IE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT63A |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 2 | BDT63A |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 3 | BDT63 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 4 | BDT63 |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 5 | BDT63B |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 6 | BDT63B |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 7 | BDT63BF |
INCHANGE |
NPN Transistor |
|
| 8 | BDT63C |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 9 | BDT63C |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 10 | BDT63CF |
INCHANGE |
NPN Transistor |
|
| 11 | BDT63F |
INCHANGE |
NPN Transistor |
|
| 12 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|