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BDT63AF |
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| Part Number | BDT63AF |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
ion to Case
MAX UNIT 1.39 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63F/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT63F
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT63AF BDT63BF
IC= 30mA ;IB=0
BDT63CF
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
VECF ICEO ICBO IE... |
| Document |
 BDT63AF Data Sheet
PDF 214.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT63A |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 2 | BDT63A |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 3 | BDT63 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 4 | BDT63 |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 5 | BDT63B |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|