·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCE.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT63A BDT63B IC= 30mA ;IB=0 BDT63C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V VECF ICEO ICBO IEBO C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IF= 3A VCE=.
SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalringt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDT63 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
2 | BDT63 |
Comset Semiconductors |
Silicon Darlington Power Transistor | |
3 | BDT63A |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
4 | BDT63A |
Comset Semiconductors |
Silicon Darlington Power Transistor | |
5 | BDT63AF |
INCHANGE |
NPN Transistor | |
6 | BDT63BF |
INCHANGE |
NPN Transistor | |
7 | BDT63C |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
8 | BDT63C |
Comset Semiconductors |
Silicon Darlington Power Transistor | |
9 | BDT63CF |
INCHANGE |
NPN Transistor | |
10 | BDT63F |
INCHANGE |
NPN Transistor | |
11 | BDT60 |
Power Innovations Limited |
PNP Transistor | |
12 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |