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SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT62-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbo.
63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C Value Unit RthJ-MB From junction to mounting base 1.39 K/W RthJ-A From junction to ambient in free air 70 K/W 26/09/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT63-A-B-C ELECTRICAL CH.
BDT63A - Inchange Semiconductor
·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT63 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 2 | BDT63 |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 3 | BDT63AF |
INCHANGE |
NPN Transistor |
|
| 4 | BDT63B |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 5 | BDT63B |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 6 | BDT63BF |
INCHANGE |
NPN Transistor |
|
| 7 | BDT63C |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 8 | BDT63C |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 9 | BDT63CF |
INCHANGE |
NPN Transistor |
|
| 10 | BDT63F |
INCHANGE |
NPN Transistor |
|
| 11 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 12 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|