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BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD540 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating B C E TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 Pin 2 is in electrica.
pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 120 40 60 80 100 120 5 5 45 2 -65 to +150 -65 to +150 -65 to +150 260 V A W W °C °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of.
BD539C - INCHANGE
·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Complement to.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD539 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 2 | BD539 |
INCHANGE |
NPN Transistor |
|
| 3 | BD539A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 4 | BD539A |
INCHANGE |
NPN Transistor |
|
| 5 | BD539B |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 6 | BD539B |
INCHANGE |
NPN Transistor |
|
| 7 | BD539D |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 8 | BD539D |
INCHANGE |
NPN Transistor |
|
| 9 | BD530 |
Motorola Inc |
PNP SILICON AMPLIFIER TRANSISTORS |
|
| 10 | BD5309-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 11 | BD5309-2M |
ROHM |
CMOS Voltage Detector |
|
| 12 | BD5310-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|