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BD539C |
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| Part Number | BD539C |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Complement to Type BD540C ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
er Transistor
BD539C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICEO
Collector Cutoff Current
VCB= 60V; IB= 0
ICES
Collector Cutoff Current
VCE= 100V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC... |
| Document |
 BD539C Data Sheet
PDF 186.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD539 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
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| 2 | BD539 |
INCHANGE |
NPN Transistor |
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| 3 | BD539A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 4 | BD539A |
INCHANGE |
NPN Transistor |
|
| 5 | BD539B |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
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