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·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Complement to Type BD540 APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VE.
METER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCB= 30V; IB= 0 ICES Collector Cutoff Current VCE= 40V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 4V hFE-2 DC Current Gain IC= 1A; VCE= 4V hFE-3 DC Current Gain IC= 3A; VCE= 4V .
BD539 - Power Innovations Limited
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD530 |
Motorola Inc |
PNP SILICON AMPLIFIER TRANSISTORS |
|
| 2 | BD5309-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 3 | BD5309-2M |
ROHM |
CMOS Voltage Detector |
|
| 4 | BD5310-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 5 | BD5310-2M |
ROHM |
CMOS Voltage Detector |
|
| 6 | BD5311-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 7 | BD5311-2M |
ROHM |
CMOS Voltage Detector |
|
| 8 | BD5312-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 9 | BD5312-2M |
ROHM |
CMOS Voltage Detector |
|
| 10 | BD5313-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 11 | BD5313-2M |
ROHM |
CMOS Voltage Detector |
|
| 12 | BD5314-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|